Array architecture for a nonvolatile 3-dimensional cross-point memory

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Abstract/Contents

Abstract
This work explores the design and capabilities of a three-dimensional cross-point array structure suitable for use with resistance-change non-volatile memory. The resistance-change cell serves as both the access element and the memory element, eliminating the need for individual selection transistors or diodes. This enables the memory to be fabricated in arrays with a line spacing of F, the minimum feature size for a given process technology. By stacking the cross-point arrays in n layers, we achieve an effective cell size of 4F^2/n. Previous works describing transistor-free memory arrays have been limited by excessive leakage current across unselected bitlines and wordlines during memory access. This work presents novel architecture and circuit techniques that minimize leakage current effects while maintaining a high effective bit density. A test chip fabricated in 0.18 um CMOS technology allows us to verify the architecture and circuit functionality. The performance of a 8 Gb memory chip build in 65 nm technology has been simulated. A random access time of 104 ns is achieved with a power dissipation of 61.2 uW. This makes the 3-D cross-point memory competitive with NOR flash in terms of read time, and competitive with NAND flash in terms of area efficiency.

Description

Type of resource text
Form electronic; electronic resource; remote
Extent 1 online resource.
Publication date 2010
Issuance monographic
Language English

Creators/Contributors

Associated with Ou, Elaine
Associated with Stanford University, Department of Electrical Engineering
Primary advisor Wong, S
Thesis advisor Wong, S
Thesis advisor Lee, Thomas
Thesis advisor Nishi, Yoshio, 1940-
Advisor Lee, Thomas
Advisor Nishi, Yoshio, 1940-

Subjects

Genre Theses

Bibliographic information

Statement of responsibility Elaine Ou.
Note Submitted to the Department of Electrical Engineering.
Thesis Thesis (Ph.D.)--Stanford University, 2010.
Location electronic resource

Access conditions

Copyright
© 2010 by Elaine Ou

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