Quantum photonics with the tin-vacancy center in diamond

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Abstract/Contents

Abstract
Quantum information processing promises to revolutionize computation and communication. Quantum networks, which consist of interconnected quantum nodes, are expected to play an important role in providing secure communication and bolstering the power of quantum computation. Quantum networks have two basic requirements: uniform, long-lived, optically accessible qubits and efficient photonic interfaces. Because of the potential for photonic integration, solid-state quantum emitters have emerged as promising qubit candidates. In particular, atomic-scale defects in diamond known as color centers have garnered much interest for their bright, spin-dependent emission and long spin coherence times. The tin-vacancy (SnV) center in diamond possesses a unique combination of excellent optical properties, inversion-symmetric crystallographic structure, and potential for long spin coherence times at temperatures above 1~K. In this dissertation, I present my work on the SnV center in diamond, from basic optical characterization to photonic integration. We start with a study of the optical and spin properties of single SnV centers isolated in diamond nanopillars. We then demonstrate electrical tuning of the optical transitions of the SnV center via the DC Stark effect, a useful tool for future multi-emitter experiments. We also explore a new approach to generating SnV centers which at once enables site-controlled generation of emitters with a thin, high-resolution implantation mask, mitigates the presence of non-SnV emission, and can be performed without a potentially damaging annealing step. After developing this new color center generation method and a strong understanding of the properties of the SnV center, we proceed to incorporate the SnV center into photonic devices to develop efficient photonic interfaces. We first demonstrate narrow-linewidth emission from SnV centers in nanobeam waveguides, which indicates that we can create photonic structures containing high-quality SnV centers. We then transition from waveguides to cavities. Incorporating SnV centers into photonic crystal cavities, we achieve a 40-fold enhancement in emission intensity, corresponding to a Purcell factor of 25 and a channeling of 90% of the SnV center emission into the cavity mode, a promising result for future SnV center photonic integration. The works presented in this dissertation constitute key developments that have advanced the SnV center from a nascent color center to a competitive optically interfaced qubit candidate.

Description

Type of resource text
Form electronic resource; remote; computer; online resource
Extent 1 online resource.
Place California
Place [Stanford, California]
Publisher [Stanford University]
Copyright date 2022; ©2022
Publication date 2022; 2022
Issuance monographic
Language English

Creators/Contributors

Author Rugar, Alison Emiko
Degree supervisor Vuckovic, Jelena
Thesis advisor Vuckovic, Jelena
Thesis advisor Melosh, Nicholas A
Thesis advisor Shen, Zhi-Xun
Degree committee member Melosh, Nicholas A
Degree committee member Shen, Zhi-Xun
Associated with Stanford University, Department of Applied Physics

Subjects

Genre Theses
Genre Text

Bibliographic information

Statement of responsibility Alison Emiko Rugar.
Note Submitted to the Department of Applied Physics.
Thesis Thesis Ph.D. Stanford University 2022.
Location https://purl.stanford.edu/dd318tr4151

Access conditions

Copyright
© 2022 by Alison Emiko Rugar
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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