Exploiting non-linear Arrhenius dependence of diode IV curves to determine Schottky barrier band diagrams

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Abstract/Contents

Abstract
Accurate extraction of Schottky barrier height is imperative to the development of low resistance contacts. An analytical model for current density is found that accurately accounts for conduction in the thermionic emission (TE), thermionic field emission (TFE), and field emission (FE) regimes. Use of this model in non-linear regression allows more information to be extracted from diode current-voltage-temperature (IVT) curves than previously possible. The proposed model uses the Arrhenius non-linear dependence experimental diode IV curves to regress the Schottky barrier height ([phi]B0), steepness factor (E00), and Fermi level ([xi]), enabling band diagrams of the measured interfaces to be determined. This model is tested against both simulated interfaces using the transmission matrix method (TMM) and experimental data. This complete picture of band information allows material interface behavior to be understood more completely, ultimately facilitating more efficient contact engineering.

Description

Type of resource text
Form electronic; electronic resource; remote
Extent 1 online resource.
Publication date 2012
Issuance monographic
Language English

Creators/Contributors

Associated with Kenney, Crystal Rose
Associated with Stanford University, Department of Electrical Engineering
Primary advisor Saraswat, Krishna
Thesis advisor Saraswat, Krishna
Thesis advisor Miller, D. A. B
Thesis advisor Wong, Hon-Sum Philip, 1959-
Advisor Miller, D. A. B
Advisor Wong, Hon-Sum Philip, 1959-

Subjects

Genre Theses

Bibliographic information

Statement of responsibility Crystal Kenney.
Note Submitted to the Department of Electrical Engineering.
Thesis Thesis (Ph.D.)--Stanford University, 2012.
Location electronic resource

Access conditions

Copyright
© 2012 by Crystal Rose Kenney
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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