Investigation of the switching mechanism in hafnium-oxide-based non-volatile resistance change memory
Abstract/Contents
- Abstract
- In recent years, an increasingly complex memory hierarchy has emerged to enable the scale, availability, security, and reliability demanded by new modes of content creation and consumption. However, the overall efficiency and performance of many memory architectures is limited by the latency-power-endurance gap that presently exists between DRAM and NAND FLASH technologies. Resistive Random Access Memory (RRAM) is a high density, low power, non-volatile memory technology that can fill this gap. Despite great interest and numerous modeling attempts, however, fundamental understanding of the RRAM operation mechanism through direct observation is lacking. In this work, first the merits of RRAM in fulfilling evolving memory technology requirements are explored and the challenges to its adoption are reviewed. Next, a novel characterization methodology, based on a highly scaled, membrane-supported lateral device structure is presented. This test device is optimized for in-situ electron microscopy and spectroscopy, while also capturing the fundamental physics governing a conventional, technologically relevant RRAM cell. The new processing techniques developed for the fabrication of sub-10 nm TiN-HfOx-TiN lateral devices on 50nm-thick membranes are described in detail. In the second part of this work, the test devices are thoroughly studied using a comprehensive set of ex-situ and in-situ characterization techniques, in order to distinguish the fundamental physical mechanisms based on direct observation of the electrical, structural, and spectral data.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2015 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Hazeghi, Aryan |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering. |
| Primary advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Saraswat, Krishna |
| Thesis advisor | Wong, Hon-Sum Philip, 1959- |
| Advisor | Saraswat, Krishna |
| Advisor | Wong, Hon-Sum Philip, 1959- |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Aryan Hazeghi. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2015. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2015 by Aryan Hazeghi
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