Fluorine passivation of defects in germanium devices
Abstract/Contents
- Abstract
- Today, new materials and structures are being deployed in MOSFET devices as the research/industry is facing challenges to ensure continued scaling for next generation technology. Germanium is one of the promising candidate materials to replace silicon-based devices, having higher mobility than silicon for better MOSFET performance. In addition, its optical operation above 1um wavelength regime makes it a suitable material for opto-electronic applications such as optical interconnects and infrared image sensors. However, due to its low band-gap (0.66eV) and fragile nature, germanium is affected severely by the presence of defects within the crystal and the surface. The effect of these defects mainly results in low n-type dopant activation, high leakage current and low carrier lifetime, which hinder the successful adaptation of germanium devices by the industry. To prevent these defect related degradation in germanium devices, we investigate the effect of fluorine passivation of defect sites. Fluorine, being the most reactive element in the periodic table has high potential to bond with the defect sites, thereby eliminating their degenerate effects. In this dissertation, we will first introduce the effect of defects in germanium. Then we will discuss the effects of fluorine as a passivation element for germanium defects. With this knowledge, we will explain the application of fluorine passivation for the following devices: 1. Forward current enhancement and leakage current reduction in n+/p diode. 2. Source and drain series resistance reduction by defect passivation in Ge nMOSFET. 3. Mobility enhancement by gate-stack fluorine passivation in Ge MOSFET. 4. Carrier lifetime enhancement in n+/p diode. Such applications of the fluorine passivation of germanium defects open new potential for high performance Ge-based devices for both MOSFET and optical devices.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2014 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Jung, Woo Shik |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering |
| Primary advisor | Saraswat, Krishna |
| Thesis advisor | Saraswat, Krishna |
| Thesis advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Wong, Hon-Sum Philip, 1959- |
| Advisor | Nishi, Yoshio, 1940- |
| Advisor | Wong, Hon-Sum Philip, 1959- |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Woo Shik Jung. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2014. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2014 by Woo Shik Jung
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
Also listed in
Loading usage metrics...