Semiconductor crystal islands for three-dimensional integration
Abstract/Contents
- Abstract
- The critical operation needed to achieve 3-dimensional integrated circuits (3DICs) is obtaining single-crystal, device-quality semiconductor material on upper circuit layers without damaging circuits below (400°C temperature limit). Simulation shows that microsecond pulse 532 nm Nd:YAG laser can melt and crystallize amorphous Si or Ge layers without excessively heating the circuit layers underneath. However, experimental results of unseeded (graphoepitaxy) and seeded (RMG) crystallization of Si and Ge indicate that much longer pulse lengths are required for high-quality single-crystal formation, rendering the approach not 3DIC compatible. A more straightforward approach is to directly attach high-quality crystal islands for upper-layer device fabrication. A variety of viable low-temperature ([less than or equal to]400°C) bonding methods have been investigated: fusion bonding (SiO2-SiO2, Si-SiO2, Ge-SiO2), thermo-compressive bonding (Cu-Cu, Ti-Ti), as well as Al-Ge eutectic bonding. The unique advantages of AlGe technique for 3DICs are reported for the first time. They include superior bond strength, low void density, non-stringent roughness requirement, use of thin films and CMOS friendly materials. Finally, we present a completed 3DIC compatible process of obtaining single crystal Si or Ge islands for upper layer device fabrication via SmartCut® and CMP finish.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2010 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Crnogorac, Filip |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering |
| Primary advisor | Brongersma, Mark L |
| Primary advisor | Pease, R. (R. Fabian W.) |
| Thesis advisor | Brongersma, Mark L |
| Thesis advisor | Pease, R. (R. Fabian W.) |
| Thesis advisor | Kamins, Theodore I |
| Thesis advisor | Nishi, Yoshio, 1940- |
| Advisor | Kamins, Theodore I |
| Advisor | Nishi, Yoshio, 1940- |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Filip Crnogorac. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph. D.)--Stanford University, 2010. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2010 by Filip Crnogorac
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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