Engineering photonic crystal cavities in III-V semiconductors for X(2) frequency conversion

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Abstract/Contents

Abstract
Nonlinear optics has traditionally been associated with large, high power devices and applications. Engineering photonic devices with high nonlinearities at low input powers and in a compact size is more challenging, but opens up a range of new applications and possibilities in spectroscopy, sensing, imaging and quantum information processing. Photonic crystal cavities provide a promising platform for achieving such lower power operation, as the low mode volumes and high quality factors allow significant intensity buildup within the cavities for very low input powers, in a device footprint on the order of a few microns. In this dissertation, we investigate the potential of photonic crystal cavities fabricated in III-V semiconductors for nonlinear frequency conversion via the second order nonlinear susceptibility of the semiconductor.

Description

Type of resource text
Form electronic; electronic resource; remote
Extent 1 online resource.
Publication date 2014
Issuance monographic
Language English

Creators/Contributors

Associated with Buckley, Sonia
Associated with Stanford University, Department of Applied Physics.
Primary advisor Byer, R. L. (Robert L.), 1942-
Primary advisor Vuckovic, Jelena
Thesis advisor Byer, R. L. (Robert L.), 1942-
Thesis advisor Vuckovic, Jelena
Thesis advisor Miller, D. A. B
Advisor Miller, D. A. B

Subjects

Genre Theses

Bibliographic information

Statement of responsibility Sonia Buckley.
Note Submitted to the Department of Applied Physics.
Thesis Thesis (Ph.D.)--Stanford University, 2014.
Location electronic resource

Access conditions

Copyright
© 2014 by Sonia Mary Buckley
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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